參數(shù)資料
型號: GS8162V18AGB-350I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 5/37頁
文件大小: 947K
代理商: GS8162V18AGB-350I
Rev: 1.00a 6/2003
13/37
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
Preliminary
Synchronous Truth Table
Operation
Address Used
State
Diagram
Key5
E1
ADSP
ADSC
ADV
W3
DQ4
Deselect Cycle, Power Down
None
X
H
X
L
X
High-Z
Read Cycle, Begin Burst
External
R
L
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding
3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
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