參數(shù)資料
型號: GS8162V18AGB-350I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 10/37頁
文件大?。?/td> 947K
代理商: GS8162V18AGB-350I
Rev: 1.00a 6/2003
18/37
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
Preliminary
Note: These parameters are sample tested.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
相關PDF資料
PDF描述
GS8162Z72CGC-250IVT 256K X 72 ZBT SRAM, 5.5 ns, PBGA209
GS8162ZV36AGD-350I 512K X 36 ZBT SRAM, 4.5 ns, PBGA165
GS82032GQ-150IT 64K X 32 CACHE SRAM, 9 ns, PQFP100
GS820V32GQ-5 64K X 32 CACHE SRAM, 5 ns, PQFP100
GS8321E18AD-333IT CACHE SRAM, PBGA165
相關代理商/技術參數(shù)
參數(shù)描述
GS8162V72CC-150 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 256KX72 7.5NS/3.8NS 209BGA - Trays
GS8162V72CC-150I 制造商:GSI Technology 功能描述:256K X 72 (18 MEG) SYNCH BURST, SCD, JTAG, FLEXDRIVE - Trays
GS8162Z18BB-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS8162Z18BB-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS8162Z18BB-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays