參數(shù)資料
型號： GS8161Z18DGD-200IVT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
封裝： ROHS COMPLIANT, FPBGA-165
文件頁數(shù)： 10/35頁
文件大?。?/td> 488K
代理商： GS8161Z18DGD-200IVT
GS8161ZxxD(GT/D)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2011
18/35
2011, GSI Technology
Preliminary
Note:
These parameters are sample tested.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
C
Ambient Temperature (Industrial Range Versions)*
TA
–
40
25
85
C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
8
10
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
12
14
pF
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Note:
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料
PDF描述
GS8161Z18DT-250IV 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
GS8161Z18DT-200T 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161Z18DGD-200V 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DGD-250 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DGD-375 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DGD-375I 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161Z18DGT-150 制造商:GSI Technology 功能描述:100 TQFP - Bulk
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