參數(shù)資料
型號(hào): GS81302D10E-300I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 16M X 9 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù): 11/33頁(yè)
文件大?。?/td> 687K
代理商: GS81302D10E-300I
Operating Currents
Parameter
Symbol
Test Conditions
-450
-400
-350
-333
-300
Notes
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
Operating
Current (x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current (x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Standby
Current
(NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V
or
≥ VDD – 0.2 V
TBD
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Preliminary
GS81302D07/10/19/37E-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2010
19/33
2008, GSI Technology
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