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參數(shù)資料
| 型號(hào)： | ES29DL400E-12RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 59/59頁 |
| 文件大?。?/td> | 603K |
| 代理商： | ES29DL400E-12RTG |
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ESI
59
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Excel Semiconductor Inc.
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep.
of Korea.
Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798
/ Homepage : www.excelsemi.com
The
attached
datasheets
are
provided by Excel Semiconductor.inc (ESI). ESI
reserves
the
right
to change the spec-
ifications and products. ESI will answer to your questions about device. If you have any questions, please
contact the
ESI office.
Document Title
32M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 2A
Dec. 1, 2004
1. The preliminary is removed from the datasheet.
2. The Icc3 (max) is changed from 5uA to 10uA.
3. The Icc4 (max) is changed from 5uA to 10uA.
4. The Icc5 (max) is changed from 5uA to 10uA.
5. The size of FBGA is changed from 8mm x 9mm to 7mm x 8mm.
6. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
7. The ball diameter of FBGA, b(min), b(nom), b(max), is changed
from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
Rev. 2B
Dec. 13, 2004
1. The arrow from Erase Suspend Read to Read is changed to
Sector Erase.
2. V
LKO
(min), 2.3V is added
Rev. 2C
Apr. 1, 2005
1. Remove FBGA Package Type.
Rev. 2D
Jan. 5, 2005
1. Add RoHS-Compliant Package Option.
相關(guān)PDF資料 |
PDF描述 |
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| ES29DL400F-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640D-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640E-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640F-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640FB-80RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL400E-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400E-90RWCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400EB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90RTGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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