參數(shù)資料
型號: ES29DL400E-12RTG
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 43/59頁
文件大小: 603K
代理商: ES29DL400E-12RTG
ESI
43
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
A
ddress
OE#
WE#
DATA
2AAh
CE#
Vcc
RY/BY#
t
WC
Erase Command Sequence (last two cycles)
VA
SA
VA
t
AS
t
VCS
t
BUSY
t
WHWH2
In
Progress
Complete
55h
30h
t
WP
t
CS
t
WPH
t
RB
t
CH
Read Status Data
555h for chip erase
10h for chip erase
t
DS
t
DH
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 23. Chip/Sector Erase Operation Timings
AC CHARACTERISTICS
t
AH
相關(guān)PDF資料
PDF描述
ES29DL400F-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640D-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640E-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640F-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640FB-80RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ES29DL400E-90RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400E-90RWCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400EB-12TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400ET-90RTGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400ET-90TGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory