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參數(shù)資料
| 型號(hào)： | ES29DL400E-12RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 19/59頁 |
| 文件大小： | 603K |
| 代理商： | ES29DL400E-12RTG |
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ESI
19
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set(00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
CFI is supported in the ES29LV320 device. The
Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their exist-
ing interfaces for long-term compatibility.
This device enters the CFI Query mode when the
system writes the
CFI query command
, 98h, to
address 55h in word mode (or address AAh in byte
mode), any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 5-8. To terminate reading
CFI data, the system must write the
reset com-
mand
.The CFI query command can be written to the
system when the device is in the
autoselect mode
or the
erase-suspend-read
mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5-8.
When the reset command is written, the device
returns respectively to the read mode or erase-sus-
pend-read mode.
Table 6. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Ch
38h
0036h
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N
us
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
us (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Common Flash Memory
Interface (CFI)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL400E-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400E-90RWCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400EB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90RTGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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