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參數(shù)資料
| 型號： | ES29DL400E-12RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 28/59頁 |
| 文件大?。?/td> | 603K |
| 代理商： | ES29DL400E-12RTG |
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ESI
28
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Read and Program during Erase-Suspend-
Read Mode
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading
at any address within erase-suspended sectors pro-
duces status information on DQ7-DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to deter-
mine if a sector is actively erasing or is erase-sus-
pended. Refer to the Write Operation Status section
for information on these status bits (Table 10).
After an erase-suspended program operation is
complete, the device returns to the erase-suspend-
read mode. The system can determine the status for
the program operation using the DQ7 or DQ6 status
bits, just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Autoselect during Erase-Suspend- Read
Mode
In the erase-suspend-read mode, the system can
also issue the autoselected command sequence.
Refer to the Autoselect Mode and Autoselect Com-
mand Sequence section for details (Table 9).
Erase Resume Command
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the chip has resumed erasing.
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PDF描述 |
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| ES29DL400F-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640D-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640E-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640F-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640FB-80RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL400E-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400E-90RWCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400EB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90RTGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL400ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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