參數(shù)資料
型號: ES29DL400E-12RTG
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 42/59頁
文件大小: 603K
代理商: ES29DL400E-12RTG
ESI
42
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
NOTES :
1. PA = program address, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
A
ddress
OE#
WE#
DATA
555h
CE#
Vcc
RY/BY#
t
WC
Program Command Sequence (last two cycles)
PA
PA
PA
t
AS
t
VCS
t
BUSY
t
WHWH1
Status
Dout
A0h
PD
t
WP
t
CS
t
WPH
t
RB
t
CH
Read Status Data(last two cycles)
t
DS
t
DH
Figure 22. Program Operation Timings
AC CHARACTERISTICS
t
AH
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