參數(shù)資料
型號(hào)： ES29DL400E-12RTG
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 58/59頁
文件大?。?/td> 603K
代理商： ES29DL400E-12RTG
ESI
58
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Document Title
32M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Nov. 10, 2003
Initial Release Version.
Rev. 0B
Nov. 26, 2003
1. The typical program/erase current value changed from 30mA to
15mA.
2. The Table 6 for manufacture ID is changed to 4Ah.
3. The extended temperature range is removed and the commer-
cial temperature range is added.
Rev. 0C
Feb. 4, 2004
1. E/W cycle number is changed from 1,000,000 to 100,000.
2. CFI code is changed : 45h : 04h ----> 45h : 00h
Rev. 1A
Mar. 1, 2004
1. The format of datasheet is entirely changed and updated
2. 70ns product is removed
3. 80R product ( 80ns : Vcc = 3.0 ~ 3.6V) is newly added.
4. A command diagram is added.
5. Sector protection / unprotection algorithm by A9 high-voltage
method is described.
6. A limitation to the maximum number of E/W cycles in the Secu-
rity Sector is described (300 E/W cycles at Max.).
7. A product selection table is added.
8. Test condtions for the typical performance of program/erase :
after 100,000 E/W cycles ----> after 10,000 E/W cycles
Rev. 1B
Apr. 23, 2004
1. The bias condition of RESET# in Table 1 for A9 high-Voltage is
changed from V
ID
to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
相關(guān)PDF資料
PDF描述
ES29DL400F-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640D-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640E-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640F-12RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL640FB-80RTG 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ES29DL400E-90RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400E-90RWCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400EB-12TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400ET-90RTGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400ET-90TGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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