參數(shù)資料
型號: ES29DL400E-12RTG
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 18/59頁
文件大?。?/td> 603K
代理商: ES29DL400E-12RTG
ESI
18
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
No
Yes
Yes
No
SET A9=OE#=V
ID
Remove V
ID
from
A9 and Write
Reset Command
Sector Protection
Complete
Set Sector Address
A<20 :12>
CE#, A6, A0=V
IL
RESET#, A1=V
IH
Protect Another
Sector
Read Data
Data = 01h
CE#,OE#,A6,A0=V
IL
RESET#, A1 = V
IH
SET WE# = V
IL
Start
COUNT = 1
Wait 150 us
SET WE# = V
IH
Increase COUNT
COUNT= 25
Device failed
Yes
No
No
Yes
Yes
No
SET A9=OE#=V
ID
Remove V
ID
from A9 and
Write Reset Command
Sector Unprotection
Complete
Set Sector AddressA<20 :12>
Read Data
SET WE# = V
IL
COUNT = 1
SET WE# = V
IH
Start
Note: All sectors must be
previously protected.
Wait 15ms
CE#,OE#, A0=V
IL
RESET#, A6, A1=V
IH
Data = 00h
The Last Sector
Address
Yes
No
Increase Sector
Address
Increase COUNT
Device failed
COUNT=1000
RESET#,
A6, A1=V
IH
CE#, A0=V
IL
,
Figure 6.
Sector Un-Protection Algorithm
(A9 High-Voltage Method)
Figure 5.
Sector Protection Algorithm
(A9 High-Voltage Method)
A9 High-Voltage Method
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