參數(shù)資料
型號(hào)： CY7C1410AV18_07
廠商： Cypress Semiconductor Corp.
英文描述： 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述： 的36 - Mbit QDR - II型⑩SRAM的2字突發(fā)結(jié)構(gòu)
文件頁(yè)數(shù)： 25/25頁(yè)
文件大小： 1021K
代理商： CY7C1410AV18_07
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *D
Page 25 of 25
Document History Page
Document Title: CY7C1410AV18/CY7C1425AV18/CY7C1412AV18/CY7C1414AV18 36-Mbit QDR-II SRAM 2-Word Burst
Architecture
Document Number: 38-05615
Orig. of
Change
**
247331
See ECN
SYT
New Data Sheet
*A
326519
See ECN
SYT
Removed CY7C1425AV18 from the title
Included 300 MHz Speed grade
Replaced TBDs with their respective values for I
DD
and I
SB1
Added Industrial temperature grade
Replaced the TBDs on the Thermal Characteristics Table to
Θ
JA
= 17.2
°
C/W
and
Θ
JC
= 3.2
°
C/W
Replaced TBDs in the Capacitance Table to their respective values for the
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 16
Added Pb-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs
according to availability
*B
413953
See ECN
NXR
Converted from preliminary to final.
Added CY7C1425AV18 part number to title.
Removed 300-MHz speed Bin.
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed C, C Description in Feature Section and Pin Description.
Added Power up sequence and Wave form on page# 19
Added foot notes # 13, 14, 15 on page# 19
Replaced Three-state with Tri-state.
Changed the description of I
X
from Input Load Current to Input Leakage
Current on page# 20
Modified the I
DD
and I
SB
values.
Modified test condition in Footnote # 20 on page# 20 from V
DDQ
< V
DD
to
V
DDQ
< V
DD.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table.
*C
468029
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly
to V
DD
to Alternately, this pin can be connected directly to V
DDQ.
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD.
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
,
t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP
AC Switching Characteristics table
Modified Power Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Changed the t
SC
and t
HC
value for 250 MHz from 0.5 ns to 0.35 ns,
for 200 MHz from 0.6 ns to 0.4 ns, and for 167 MHz from 0.7 ns to 0.5 ns.
Modified AC Switching Waveform.
Corrected the typo In the AC Switching Characteristics Table.
Updated the Ordering Information Table.
*D
1274725
See ECN
VKN/AESA Modified footnote# 30
REV.
ECN No.
Issue Date
Description of Change
相關(guān)PDF資料
PDF描述
CY7C1410AV18-167BZI 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1410AV18-167BZXC 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1410AV18-167BZXI 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1410AV18-200BZI 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1410AV18-200BZXC 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1411BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36Mb QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411KV18-300BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (4Mx8) 1.8v 300MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411SC 制造商:Cypress Semiconductor 功能描述:
CY7C1411SV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 NV靜態(tài)隨機(jī)存取存儲(chǔ)器 250 MHz 1.8V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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