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參數(shù)資料
| 型號： | CY7C1410AV18_07 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 的36 - Mbit QDR - II型⑩SRAM的2字突發(fā)結(jié)構(gòu) |
| 文件頁數(shù)： | 24/25頁 |
| 文件大小： | 1021K |
| 代理商： | CY7C1410AV18_07 |
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *D
Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 24 of 25
Package Diagram
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
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CY7C1425AV18-250BZI
CY7C1412AV18-250BZI
CY7C1414AV18-250BZI
CY7C1410AV18-250BZXI
CY7C1425AV18-250BZXI
CY7C1412AV18-250BZXI
CY7C1414AV18-250BZXI
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Ordering Information
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Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
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for actual products offered.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1410AV18-167BZI | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1410AV18-167BZXC | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1410AV18-167BZXI | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1410AV18-200BZI | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1410AV18-200BZXC | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1411BV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mx36 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1411KV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 36Mb QDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1411KV18-300BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 36MB (4Mx8) 1.8v 300MHz QDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1411SC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1411SV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 NV靜態(tài)隨機(jī)存取存儲器 250 MHz 1.8V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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