參數(shù)資料
型號(hào)： CY7C1380C-167AI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 18-Mb (512K x 36/1M x 18) Pipelined SRAM
中文描述： 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù)： 24/36頁
文件大?。?/td> 788K
代理商： CY7C1380C-167AI
CY7C1380C
CY7C1382C
Document #: 38-05237 Rev. *D
Page 24 of 36
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........–0.3V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
3.3V
– 5%/+10% 2.5V – 5%
to
V
DD
Electrical Characteristics
Over the Operating Range
[12, 13]
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[12]
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[12]
I
X
Input Load Current ex-
cept ZZ and MODE
Input Current of MODE Input = V
SS
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–30
5
5
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max., I
OUT
= 0 mA,
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
7.5-ns cycle, 133 MHz
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
7.5-ns cycle, 133 MHz
All speeds
350
325
300
275
245
120
110
100
90
85
70
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
相關(guān)PDF資料
PDF描述
CY7C1380C-167BGC 18-Mb (512K x 36/1M x 18) Pipelined SRAM
CY7C1380C-167BGI 18-Mb (512K x 36/1M x 18) Pipelined SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1380C-167BGC 制造商:Cypress Semiconductor 功能描述:
CY7C1380C-167BGCT 制造商:Cypress Semiconductor 功能描述:
CY7C1380C-167BZC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 18MBIT 512KX36 3.4NS 165FBGA - Bulk
CY7C1380C-167BZI 功能描述:IC SRAM 512KX36 SYNC 165-FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
CY7C1380C-200AC 制造商:Rochester Electronics LLC 功能描述:16MB (512KX36) 3.3V SYNC-PIPE (SINGLE CYCLE DESELECT) SRAM - Bulk
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