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參數(shù)資料
| 型號： | CY7C1380C-167AI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| 中文描述： | 512K X 36 CACHE SRAM, 3.4 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 10/36頁 |
| 文件大小： | 788K |
| 代理商： | CY7C1380C-167AI |
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CY7C1380C
CY7C1382C
Document #: 38-05237 Rev. *D
Page 10 of 36
ADSP
84
A4
B9
Input-
Synchronous
Address Strobe from Processor, sampled on
the rising edge of CLK, active LOW
. When
asserted LOW, addresses presented to the device
are captured in the address registers. A1: A0 are
also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
ASDP is ignored when CE
1
is deasserted HIGH.
ADSC
85
P4
A8
Input-
Synchronous
Address Strobe from Controller, sampled on the
rising edge of CLK, active LOW
. When asserted
LOW, addresses presented to the device are
captured in the address registers. A1: A0 are also
loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
ZZ
64
T7
H11
Input-
Asynchronous
ZZ “sleep” Input, active HIGH
. When asserted
HIGH places the device in a non-time-critical
“sleep” condition with data integrity preserved. For
normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull-down.
DQs,
DQPs
58,59,62,
63,68,69,
72,73,8,9,
12,13,18,
19,22,23,
74,24
P7,K7,
G7,E7,
F6,H6,L6,N6,
D1,
H1,L1,
N1,E2,
G2,K2,
M2,D6,
P2
J10,K10,
L10,M10,
D11,E11,
F11,G11,J1,K1
,L1,M1,D2,E2,
F2,
G2,C11,N1
I/O-
Synchronous
Bidirectional Data I/O lines
. As inputs, they feed
into an on-chip data register that is triggered by the
rising edge of CLK. As outputs, they deliver the data
contained in the memory location specified by the
addresses presented during the previous clock rise
of the read cycle. The direction of the pins is
controlled by OE. When OE is asserted LOW, the
pins behave as outputs. When HIGH, DQs and
DQP
X
are placed in a tri-state condition.
Power Supply
Power supply inputs to the core of the device
.
V
DD
15,41,65,
91
C4,J2,J4,J6,
R4
D4,D8,E4,E8,
F4,F8,
G4,G8,H4,
H8,J4,J8,
K4,K8,L4,
L8,M4,M8
V
SS
17,40,67,
90
D3,D5,
E5,E3,F3,F5,
G5,
H3,H5,
K3,K5,L3,M3,
M5,
N3,N5,
P3,P5
H2,C4,C5,C6,
C7,C8,D5,D6,
D7,E5,E6,E7,
F5,F6,F7,
G5,G6,G7,
H5,H6,H7,J5,J
6,J7,
K5,K6,K7,
L5,L6,L7,
M5,M6,M7,N4,
N8
Ground
Ground for the core of the device
.
V
SSQ
5,10,21,26,55,
60,71,
76
-
-
I/O Ground
Ground for the I/O circuitry
.
CY7C1382C:Pin Definitions
(continued)
Name
TQFP
BGA
fBGA
I/O
Description
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1380C-167BGC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1380C-167BGI | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1380C-200AC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1380C-200BGC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1380C-250AC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1380C-167BGC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1380C-167BGCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1380C-167BZC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 18MBIT 512KX36 3.4NS 165FBGA - Bulk |
| CY7C1380C-167BZI | 功能描述:IC SRAM 512KX36 SYNC 165-FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C1380C-200AC | 制造商:Rochester Electronics LLC 功能描述:16MB (512KX36) 3.3V SYNC-PIPE (SINGLE CYCLE DESELECT) SRAM - Bulk |
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