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參數(shù)資料
| 型號： | CY7C1356CV25-225BGC |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| 中文描述： | 9兆位（256 × 36/512K × 18）流水線的SRAM的總線延遲，TM架構(gòu) |
| 文件頁數(shù)： | 15/25頁 |
| 文件大?。?/td> | 353K |
| 代理商： | CY7C1356CV25-225BGC |
PRELIMINARY
CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *B
Page 15 of 25
10
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
D6
E7
F6
G7
H6
T7
K7
L6
N6
P7
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
T6
A3
C5
B5
A5
C6
A6
P4
N4
R6
T5
T3
R2
R3
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
P2
N1
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
C11
D11
E11
F11
G11
H11
J10
K10
L10
M10
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
R11
R10
P10
R9
P9
R8
P8
R6
P6
R4
P4
R3
P3
R1
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
N1
M1
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
Boundary Scan Exit Order (×18)
(continued)
Bit #
119-Ball ID
165-Ball ID
48
49
50
51
M2
L1
K2
L1
K1
J1
Not Bonded
(Preset to 1)
H1
G2
E2
D1
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
C2
A2
E4
B2
Not Bonded
(Preset to 0
G3
Not Bonded
(Preset to 1)
G2
F2
E2
D2
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
B2
A2
A3
B3
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
A4
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
Not Bonded
(Preset to 0
L5
B6
B6
B6
L5
B6
G3
68
69
69
69
68
69
66
B5
A6
A6
A6
B5
A6
Not Bonded
(Preset to 0)
A4
67
Not Bonded
(Preset to 0
L5
B6
68
69
B5
A6
Boundary Scan Exit Order (×18)
(continued)
Bit #
119-Ball ID
165-Ball ID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1356CV25-225BGI | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| CY7C1356CV25-225BGXC | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| CY7C1356CV25-225BGXI | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| CY7C1356CV25-225BZC | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| CY7C1356CV25-225BZI | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1356CV25-250AXC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1356S-166AXC | 功能描述:IC SRAM 9MB SYNC 100-TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C1356S-166AXI | 功能描述:IC SRAM 9MB SYNC 100-TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C1356S-166BGC | 功能描述:IC SRAM 512KX18 NOBL 119-BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C1356SV25-166AXC | 功能描述:靜態(tài)隨機存取存儲器 9-Mbit Pipelined 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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