參數(shù)資料
型號(hào): CY22E016L
廠商: Cypress Semiconductor Corp.
英文描述: 16-Kbit (2K x 8) nvSRAM
中文描述: 16千位(2K × 8)非易失
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 748K
代理商: CY22E016L
PRELIMINARY
CY22E016L
Document #: 001-06727 Rev. *C
Page 7 of 14
Thermal Resistance
[3]
Parameter
Θ
JA
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
28-SOIC
TBD
Unit
°
C/W
Test conditions follow standard test methods and proce-
dures for measuring thermal impedance, per EIA / JESD51.
Θ
JC
TBD
°
C/W
AC Test Loads
AC Test Conditions
5.0V
OUTPUT
30 pF
R1 480
R2
255
Input Pulse Levels..................................................0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels....................1.5 V
[+] Feedback
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