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參數(shù)資料
| 型號： | CY22E016L |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 16-Kbit (2K x 8) nvSRAM |
| 中文描述： | 16千位（2K × 8）非易失 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 748K |
| 代理商： | CY22E016L |
PRELIMINARY
CY22E016L
Document #: 001-06727 Rev. *C
Page 5 of 14
Preventing STOREs
The STORE
function can be disabled on the fly by holding HSB
high with a driver capable of sourcing 30 mA at a V
OH
of at
least 2.2V, as it will have to overpower the internal pull-down
device that drives HSB low for 20 ns at the onset of a STORE.
When the CY22E016L is connected for AutoStore operation
(system V
CC
connected to V
CC
and a 68
μ
F capacitor on V
CAP
)
and V
CC
crosses V
SWITCH
on the way down, the CY22E016L
will attempt to pull HSB low; if HSB doesn’t actually get below
V
IL
, the part will stop trying to pull HSB low and abort the
STORE
attempt.
Table 1. Hardware Mode Selection
CE
WE
HSB
A10–A0
Mode
I/O
Power
H
X
H
X
Not Selected
Output High-Z
Standby
L
H
H
X
Read SRAM
Output Data
Active
L
L
H
X
Write SRAM
Input Data
Active
X
X
L
X
Non-Volatile
STORE
Output High-Z
I
CC2
Figure 4. Current vs. Cycle Time (READ)
Figure 5. Current vs. Cycle Time (WRITE)
[+] Feedback
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| CY22E016L-SZ25XCT | 16-Kbit (2K x 8) nvSRAM |
| CY22E016L-SZ35XCT | 16-Kbit (2K x 8) nvSRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY22E016L_07 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16 Kbit (2K x 8) nvSRAM |
| CY22E016L-SZ25XC | 制造商:Cypress Semiconductor 功能描述: |
| CY22E016L-SZ25XCT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16 Kbit (2K x 8) nvSRAM |
| CY22E016L-SZ25XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16 Kbit (2K x 8) nvSRAM |
| CY22E016L-SZ25XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16 Kbit (2K x 8) nvSRAM |
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