參數(shù)資料
型號(hào): BGB110
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡(luò)
英文描述: Bluetooth radio module
中文描述: SPECIALTY TELECOM CIRCUIT, XMA34
封裝: 13.75 X 10.20 X 1.90 MM, LEADLESS, METAL CAP, SOT, MODULE-34
文件頁數(shù): 14/17頁
文件大?。?/td> 141K
代理商: BGB110
2000 Oct 03
14
Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
Notes
1.
The VCO frequency is one-half the RF frequency.
spourious emissions
30 MHz to 1 GHz
1 GHz to 12.75 GHz
measured at 2450MHz
tbd
tbd
tbd
tbd
tbd
-47
dBc
dBc
dBc
FTLOrf
LO to RF feedthrough
Interface (logic) inputs and outputs
V
IH
V
IL
V
OH
V
OL
I
bias
f
JTAG
f
SYS
f
LPO
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input bias current
JTAG interface frequency
system clock frequency
low-power clock frequency
2.1
0.5
2.4
10
1
13
3.2
V
S
0.9
0.5
10
5
V
V
V
V
μ
A
MHz
MHz
kHz
HIGH or LOW level
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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