參數(shù)資料
型號: BGB110
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡(luò)
英文描述: Bluetooth radio module
中文描述: SPECIALTY TELECOM CIRCUIT, XMA34
封裝: 13.75 X 10.20 X 1.90 MM, LEADLESS, METAL CAP, SOT, MODULE-34
文件頁數(shù): 12/17頁
文件大?。?/td> 141K
代理商: BGB110
2000 Oct 03
12
Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
CHARACTERISTICS
V
CC
= 3.0 V;T
amb
= 25
°
C; f
dev
= 160 kHz; unless otherwise specified. Characteristics for which only a typical value is
given are not tested.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
S
I
S(GUARD-RX)
I
S(RX)
I
S(GUARD-TX)
I
S(TX)
I
S(pd)
Frequency selection
supply voltage
total supply current
total supply current
total supply current
total supply current
total supply current
2.8
3.0
30
65
43
37
1
3.6
tbd
tbd
tbd
tbd
tbd
V
mA
mA
mA
mA
mA
during RX guard space
during RX (PLL off)
during TX guard space
during TX (PLL off)
power-down mode
f
ref
f
ref
V
ref(min)
R
in
reference input frequency
reference frequency inaccuracy
sinusoidal input signal level
input resistance (real part of the
input impedance)
input capacitance
oscillator frequency
13
tbd
MHz
ppm
mV
k
tbd
tbd
tbd
tbd
RMS value
at 13 MHz; XON, XOP pins
C
in
f
VCO
at 13 MHz; XON, XOP pins
over full temperature and supply
range; note 1
offset from carrier 500 kHz
offset from carrier 2500 kHz
over 1 TX slot
over 3, 5 TX slots (DM3, DH3,
DM5, DH5 packets)
across entire band
1201
tbd
1240
pF
MHz
CNR
500kHz
CNR
2500kHz
f
1 slot
f
3, 5 slots
carrier to noise ratio
89
120
25
40
105
tbd
0
0
25
40
dBcHz
dBcHz
kHz
kHz
carrier drift
t
PLL
TX performance
PLL settling time
150
200
μ
s
f
RF
RF frequency
over full temperature and supply
range
0
bit
1
bit
wanted channel
at 1 MHz offset; measured in
100 kHz bandwidth; referred to
wanted channel
normalized to Z
o
= 50
referred to wanted output level;
f
RF
= 2450 MHz;
f
VCO
= 1225 MHz
2402
2480
MHz
f
VCO frequency deviation
175
140
6
160
160
0
140
175
4
20
kHz
kHz
dBm
dBc
P
o
P
o 1 MHz
output power
adjacent channel output power
VSWR
H
1, VCO
H
3, VCO
H
4, VCO
H
6, VCO
voltage standing wave ratio
VCO frequency feedtrough
VCO 3
rd
harmonic
VCO 4
th
harmonic
VCO 6
th
harmonic
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
dBc
dBc
dBc
dBc
相關(guān)PDF資料
PDF描述
BGB550 ?Biased RF-Trans. in SIEGET45 Technology Icmax = 300mA. SCT595 ?
BGD102 CATV Wideband Amplier
BGD104 PV SERIES
BGD108 PV SERIES
BGD501
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BGB201 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Bluetooth System-in-a-Package radio with baseband controller
BGB203 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Bluetooth System-in-a-Package radio with baseband controller
BGB203/H1/S06,518 功能描述:RF片上系統(tǒng) - SoC BLUETOOTH 1.2 SIP RoHS:否 制造商:Texas Instruments 類型:Zigbee 處理器系列:CC253 核心:8051 最大數(shù)據(jù)速率:250 Kbps 輸出功率:4.5 dBm 靈敏度:- 97 dBm 工作電源電壓:2 V to 3.6 V 接收供電電流:24.3 mA 傳輸供電電流:33.5 mA 程序存儲器大小:256 KB 工作溫度范圍:- 40 C to + 125 C 封裝 / 箱體:QFN-40
BGB203/H1/S06-T 功能描述:RF片上系統(tǒng) - SoC BLUETOOTH 1.2 SIP RoHS:否 制造商:Texas Instruments 類型:Zigbee 處理器系列:CC253 核心:8051 最大數(shù)據(jù)速率:250 Kbps 輸出功率:4.5 dBm 靈敏度:- 97 dBm 工作電源電壓:2 V to 3.6 V 接收供電電流:24.3 mA 傳輸供電電流:33.5 mA 程序存儲器大小:256 KB 工作溫度范圍:- 40 C to + 125 C 封裝 / 箱體:QFN-40
BGB203H1S06UM 制造商:NXP Semiconductors 功能描述:IC BLUETOOTH SIP 48HVQFN