參數(shù)資料
型號： AS4DDR16M72-8/XT
廠商： AUSTIN SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 16M X 72 DDR DRAM, 0.8 ns, PBGA219
封裝： 32 X 25 MM, PLASTIC, BGA-219
文件頁數(shù)： 4/19頁
文件大?。?/td> 363K
代理商： AS4DDR16M72-8/XT
iiiiiPEM
PEM
1.2 G
1.2 Gbbbbb SDRAM-DDR
SDRAM-DDR
AS4DDR16M72PBG
AS4DDR16M72PBG
Rev. 2.1 06/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1,6)
V
CC, VCCQ = +2.5V ± 0.2V; -55
oC ± 0.2V, -55oC
T
A
+125oC
Parameter / Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
2.3
2.7
V
I/O Supply Voltage
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V
VIN
VCC (All other pins not under test = 0V)
II
-2
2
A
Input Leakage Address Current (All other pins not under test = 0V)
II
-10
10
A
Output Leakage Current: I/O's are disabled; 0V
VOUT
VCC
IOZ
-5
5
A
Output Levels: Full drive option
IOH
-12
-
m
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
A
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOL
12
-
mA
Output Levels: Reduced drive option
IOHR
-9
-
m
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
A
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOLR
9-
mA
I/O Reference Voltage (6)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (53)
VTT
VREF - 0.04
VREF + 0.04
V
AC INPUT OPERATING CONDITIONS (NOTES 1,6)14, 28, 40
V
CC, VCCQ = +2.5V ± 0.2V; -55
oC ± 0.2V, -55oC
T
A
+125oC
Parameter / Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage:
VIH (AC) VREF + 0.310
-V
Input Low (Logic ) Voltage:
VIL (AC)
-
VREF - 0.310
V
I
CC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)
V
CC, VCCQ = +2.5V ± 0.2V; -55
oC ± 0.2V, -55oC T
A
+125oC
Parameter / Condition
Symbol
Max
333, 266
200 Mbps Units
250 Mbps
OPERATING CURRENT: One bank, Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles; (22, 48)
ICC0
625
600
mA
OPERATING CURRENT: One bank, Active-Read- Precharge; Burst=2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs
changing once every two clock cycles; (22, 48)
ICC1
850
775
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK=tCK (MIN); CKE=LOW; (23, 32. 50)
ICC2P
20
mA
IDLE STANDBY CURRENT: CS#=HIGH, All banks idle; tCK=tCK (MIN); CKE=HIGH; Address and other control inputs changing once per clock
cycle. VIN=VREF for DQ, DQS and DM (51)
ICC2F
225
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK=tCK (MIN); CKE=LOW (23, 32, 50)
ICC3P
150
mA
ACTIVE STANDBY CURRENT: CS#=HIGH; CKE=HIGH; One bank; Active Precharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM and DQS inputs
changin twicer per clock cycle; Address and other control inputs changing once per clock cycle (22)
ICC3N
250
mA
OPERATING CURRENT: Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK
(MIN); IOUT=0mA (22,48)
ICC4R
925
mA
OPERATING CURRENT: Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK
(MIN); DQ, DM and DQS inputs changin twice per clock cycle (22)
ICC4W
800
mA
AUTO REFRESH CURRENT
tREF=tRC
ICC5
(MIN) (27, 50)
1225
mA
tREF
ICC5A
=7.8125 s (27, 50)
30
mA
SELF REFRESH CURRENT: CKE
0.2V
Standard (11)
ICC6
20
mA
OPERATING CURRENT: Four bank interleaving DEADs (BL=4) with auto precharge, tRC=tRC (MIN); tCK=tCK (MIN); Addresses and control inputs
change only during Active READ or WRITE commands. (22, 49)
ICC7
2000
mA
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相關代理商/技術參數(shù)
參數(shù)描述
AS4DDR16M72PBG 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR16M72PBG-10/ET 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays
AS4DDR16M72PBG-10/IT 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays
AS4DDR16M72PBG-10/XT 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays
AS4DDR16M72PBG-75/IT 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays
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