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參數(shù)資料
| 型號： | AS4DDR16M72-8/XT |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 363K |
| 代理商： | AS4DDR16M72-8/XT |
iiiiiPEM
PEM
1.2 G
1.2 Gbbbbb SDRAM-DDR
SDRAM-DDR
AS4DDR16M72PBG
AS4DDR16M72PBG
Rev. 2.1 06/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
BGA Locations
SYMBOL
DESCRIPTION
F4, F16, G5, G15, K1, K12,
L2, L13, N6, M8
CKx, CKx\
Clock: CKx and CKx\ are differential clock inputs. All address and control input signals
are sampled on the crossing of the positive edge of CKx and negative edge of CKx\.
Output data (DQ's and DQS) is referenced to the crossings of the differential clock
inputs.
G4, G16, K2, K13, M6
CKEx
Clock Enable: CKE controls the clock inputs. CKE high enables, CKE Low disables
the clock input pins. Driving CKE Low provides PRECHARGE POWER-DOWN. CKE
is synchronous for POWER-DOWN entry and exit, and for SELF REFRESH entry CKE
is Asynchronous for SELF REFRESH exit and for disabling the outputs. CKE must be
maintained HIGH throughout read and write accesses. Input buffers are disabled
during POWER-DOWN Input buffers are disabled during SELF REFRESH. CKE is an
SSTL-2 input but will detect an LVCMOS LOW level after VCC is applied
G1, G13, K4, K16, M12
CSx\
Chip Select: CSx\ enables the COMMAND register(s) of each of the five (5) contained
words. All commands are masked with CSx\ is registered HIGH. CSx\ provides for
external bank selection on systems with multiple banks. CSx\ is considered part of the
COMMAND CODE.
F4, F16, G5, G15, K1, K12,
L2, L13, N7, M9
RASx\, CASx\,
Wex\
Command Inputs: RASx, CASx and Wex\ define the command being entered.
G4, G16, K2, K14, M7
DQMLx, DQMHx
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DQMLx or Hx is sampled HIGH at time of a WRITE access. DM is sampled on both
edges of DQSLx and DQSHx.
E8, E9
BA0, BA1
Bank Address Inputs: BA0, BA1, define which bank an ACTIVE READ, WRITE or
PRECHARGE Command is being applied.
A7, A8, A9, A10, B7, B8,
B9, B10, C7, C8. C9, C10,
D7
A0-11, A12
Address Input: Provide the row address for Active commands, and the column address
and auto precharge bit (A10) for READ / WRITE commands to select one location out
of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank or all banks.
The address inputs also provide the op-code during a MODE RESISTER SET
command.
A2, A3, A4, A13, A14, B1,
B2, B3, B4, B13, B14, B15,
B16, C1, C2, C3, C4, C13,
C14, C15, C16, D1, D2, D3,
D4, D13, D14, D15, D16,
E1, E16, M1, M16, N1, N2,
N3, N4, N13, N14, N15,
N16, T2, T3, T4, T13, T14,
T15, N7, N8, N9, N10, P7,
P8, P9, P10, R7, R8, R9,
R10, T7, T8, T9, T10
DQ0-79
Data I/O
E6, E7, E10, E11, F5, K5,
L12, N5, N12, E5
DQSLX, DQSHX
Data Stobe: Output with read data, input with write data. DQS is edge-aligned with
read data, centered in write data. It is used to capture data
B11, B12, C5, C6, E3, F3,
G3, H3, H12, H16, J3, J12,
J16, K3, L3, M3, P11, P12,
R5, R6, T16
VCC
Core Power Supply
A11, A12, D5, D6, H4, H15,
J4, J15, T5, T6
VCCQ
I/O Power Supply
A5, A6, A16, B5, B6, C11,
C12, D11, D12, E14, F14,
G14, H1, H2, H5, H13,
H14, J1, J2, J5, J13, J14,
K14, L14, P5, P6, R11.
R12, T1, T11, T12, M14
VSS
Ground (Digital)
E12
VREF
SSTL-2 Reference Voltage
PIN DEFINITIONS / FUNCTIONAL DESCRIPTION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4DDR16M72PBG | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit |
| AS4DDR16M72PBG-10/ET | 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays |
| AS4DDR16M72PBG-10/IT | 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays |
| AS4DDR16M72PBG-10/XT | 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays |
| AS4DDR16M72PBG-75/IT | 制造商:Micross Components 功能描述:SDRAM-DDR, 1.2GB - Trays |
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