參數(shù)資料
型號: AM45DL32X8G
英文描述: 200NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am45DL32x8G -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 64/64頁
文件大?。?/td> 1191K
代理商: AM45DL32X8G
August 28, 2002
Am45DL32x8G
63
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (June 3, 2002)
Initial release.
Revision A+1 (June 18, 2002)
CompactCell SRAM DC and Operating
Characteristics
Added V
IH
and V
IL
specifications and added notes to
table.
Revision A+2 (July 9, 2002)
Command Definitions (Flash Word Mode)
Changed 80h to 82h for factory locked and 00h to
002h for not factory locked.
Revision A+3 (August 28, 2002)
CFI
Changed the text in the last paragraph to read
read-
ing array data.
DC Characteristics
Deleted the I
ACC
specification row in table.
Performance Characteristics
Changed 1 million
write
cycles guaranteed to 1 mil-
lion
erase
cycles.
SRAM Data Retention
Changed the minimum value of V
CC
for Data Retention
from 2.8 to 1.8.
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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