參數(shù)資料
型號: AM45DL32X8G
英文描述: 200NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am45DL32x8G -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 26/64頁
文件大小: 1191K
代理商: AM45DL32X8G
August 28, 2002
Am45DL32x8G
25
P R E L I M I N A R Y
Table 13.
System Interface String
Table 14.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7
D4: volt, D3
D0: 100 millivolt
1Ch
38h
0036h
V
CC
Max. (write/erase)
D7
D4: volt, D3
D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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