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參數(shù)資料
| 型號： | AB28F400BX-T90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | JT 32C 32#20 PIN RECP |
| 中文描述： | 256K X 16 FLASH 12V PROM, 90 ns, PDSO44 |
| 封裝： | 1.110 X 0.525 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 30/34頁 |
| 文件大?。?/td> | 461K |
| 代理商： | AB28F400BX-T90 |
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A28F400BX-T/B
AC CHARACTERISTICSDWE
Y
Controlled Write Operations
(1)
(Continued)
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, RP
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
9. See Standard Test Configuration.
BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
V
PP
e
12.0V
g
5%
Parameter
Notes
A28F400BX-90
Unit
Min
Typ
(1)
Max
Boot/Parameter
Block Erase Time
2
1.5
10.5
s
Main Block
Erase Time
2
3.0
18
s
Main Block Byte
Program Time
2
1.4
5.0
s
Main Block Word
Program Time
2
0.7
2.5
s
NOTES:
1. 25
§
C
2. Excludes System-Level Overhead.
30
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