參數(shù)資料
型號: AB28F400BX-T90
廠商: INTEL CORP
元件分類: DRAM
英文描述: JT 32C 32#20 PIN RECP
中文描述: 256K X 16 FLASH 12V PROM, 90 ns, PDSO44
封裝: 1.110 X 0.525 INCH, PLASTIC, SOP-44
文件頁數(shù): 21/34頁
文件大?。?/td> 461K
代理商: AB28F400BX-T90
A28F400BX-T/B
290501–11
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Read
Status Register Data.
Toggle OE
Y
or CE
Y
to
update Status Register
Standby
Check SR.7
1
e
Ready
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from block
other than that being
erased.
Write
Erase Resume
Data
e
D0H
Figure 9. Erase Suspend/Resume Flowchart
3.4 Power Consumption
3.4.1 ACTIVE POWER
With CE
Y
at a logic-low level and RP
Y
at a logic-
high level, the device is placed in the active mode.
The device I
CC
current is a maximum 65 mA at
10 MHz with TTL input signals.
3.4.2 AUTOMATIC POWER SAVINGS
Automatic Power Savings (APS) is a low pwer fea-
ture during active mode of operation. The 4-Mbit
family of products incorporate Power Reduction
Control (PRC) circuitry which basically allows the de-
vice to put itself into a low current state when it is
not being accessed. After data is read from the
memory array, PRC logic controls the device’s pow-
er consumption by entering the APS mode where
maximum I
CC
current is 3 mA and typical I
CC
current
is 1 mA. The device stays in this static state with
outputs valid until a new location is read.
3.4.3 STANDBY POWER
With CE
Y
at a logic-high level (V
IH
), and the CUI in
read mode, the memory is placed in standby mode
where the maximum I
CC
standby current is 100
m
A
with CMOS input signals. The standby operation dis-
ables much of the device’s circuitry and substantially
reduces device power consumption. The outputs
(DQ
[
0:15
]
or DQ
[
0:7
]
) are placed in a high-imped-
ance state independent of the status of the OE
Y
signal. When the 4-Mbit boot block flash family is
deselected during erase or program functions, the
devices will continue to perform the erase or pro-
gram function and consume program or erase active
power until program or erase is completed.
21
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