參數(shù)資料
型號: 5962-0924001VXC
廠商: TEXAS INSTRUMENTS INC
元件分類: ADC
英文描述: 1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CQFP100
封裝: HERMETIC SEALED, CERAMIC, QFP-100
文件頁數(shù): 12/46頁
文件大?。?/td> 1109K
代理商: 5962-0924001VXC
SLAS669B
– SEPTEMBER 2010 – REVISED MAY 2011
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 1. PACKAGE/ORDERING INFORMATION(1)
TEMPERATURE
PACKAGE(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
ADS5400MHFSV
5962-0924001VXC
–55°C to 125°C Tcase
CFP-HFS
ADS5400MHFS-V
5962-0924001VXC
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2)
Package drawings, standard packaging quanities, thermal data, symbolization, and PCB design guidelines are available at
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
UNIT
AVDD5 to GND
6
V
Supply voltage
AVDD3 to GND
5
V
DVDD3 to GND
5
V
AINP, AINN to GND(2)
voltage difference between pin and ground
0.5 to 4.5
V
short duration
–0.3 to (AVDD5 + 0.3)
V
voltage difference between
AINP to AINN (2)
pins, common mode at
continuous AC signal
1.25 to 3.75
V
AVDD5/2
continuous DC signal
1.75 to 3.25
V
CLKINP, CLKINN to GND (2)
voltage difference between pin and ground
0.5 to 4.5
V
voltage difference between
continuous AC signal
1.1 to 3.9
V
CLKINP to CLKINN (2)
pins, common mode at
continuous DC signal
2 to 3
V
AVDD5/2
RESETP, RESETN to GND (2)
voltage difference between pin and ground
–0.3 to (AVDD5 + 0.3)
V
continuous AC signal
1.1 to 3.9
V
voltage difference between
RESETP to RESETN (2)
pins
continuous DC signal
2 to 3
V
Data/OVR Outputs to GND (2)
–0.3 to (DVDD3 + 0.3)
SDENB, SDIO, SCLK to GND(2)
–0.3 to (AVDD3 + 0.3)
voltage difference between pin and ground
V
ENA1BUS, ENPWD, ENEXTREF
–0.3 to (AVDD5 + 0.3)
to GND(2)
Operating case temperature range
–55 to 125
°C
Maximum junction temperature, TJ
150
°C
Storage temperature range
–65 to 150
°C
ESD, human-body model (HBM)
2
kV
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied. Kirkendall voidings and current density information for calculation of expected lifetime is available upon
request.
(2)
Valid when supplies are within recommended operating range.
2
Copyright
2010–2011, Texas Instruments Incorporated
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