參數(shù)資料
型號(hào): 376
廠商: Intel Corp.
英文描述: DIODE SCHOTTKY DUAL-DUAL SERIES 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL
中文描述: 376TM,高性能32位嵌入式處理器
文件頁數(shù): 64/95頁
文件大?。?/td> 1293K
代理商: 376
376 EMBEDDED PROCESSOR
Table 6.4. 80376 A.C. Characteristics at 16 MHz
(Continued)
Functional Operating Range: V
CC
e
5V
g
10%; T
CASE
e
0
§
C to 115
§
C for 88-pin PGA or 100-pin PQFP
Symbol
Parameter
Min
Max
Unit
Figure
Notes
t
27
NMI, INTR Setup Time
16
ns
6.4
(2)
t
28
NMI, INTR Hold Time
16
ns
6.4
(2)
t
29
PEREQ, ERROR, BUSY, FLT
Setup Time
16
ns
6.4
(2)
t
30
PEREQ, ERROR, BUSY, FLT
Hold Time
5
ns
6.4
(2)
NOTES:
1. Float condition occurs when maximum output current becomes less than I
LO
in magnitude. Float delay is not 100%
tested.
2. These inputs are allowed to be asynchronous to CLK2. The setup and hold specifications are given for testing purposes,
to assure recognition within a specific CLK2 period.
3. These are not tested. They are guaranteed by design characterization.
4. Tested with C
L
set to 50 pF and derated to support the indicated distributed capacitive load. See Figures 6.8 through 6.10
for capacitive derating curves.
5. The 80376 does not have t
17
or t
18
timing specifications.
Table 6.5. 80376 A.C. Characteristics at 20 MHz
Functional Operating Range: V
CC
e
5V
g
10%; T
CASE
e
0
§
C to 115
§
C for 88-pin PGA or 100-pin PQFP
Symbol
Parameter
Min
Max
Unit
Figure
Notes
Operating Frequency
4
20
MHz
Half CLK2 Frequency
t
1
CLK2 Period
25
125
ns
6.3
t
2a
CLK2 HIGH Time
8
ns
6.3
At 2V
(3)
t
2b
CLK2 HIGH Time
5
ns
6.3
At (V
CC
b
0.8)V
(3)
t
3a
CLK2 LOW Time
8
ns
6.3
At 2V
(3)
t
3b
CLK2 LOW Time
6
ns
6.3
At 0.8V
(3)
t
4
CLK2 Fall Time
8
ns
6.3
(V
CC
b
0.8V) to 0.8V
(3)
0.8V to (V
CC
b
0.8)
(3)
C
L
e
120 pF
(4)
t
5
CLK2 Rise Time
8
ns
6.3
t
6
A
23
–A
1
Valid Delay
4
30
ns
6.5
t
7
A
23
–A
1
Float Delay
4
ns
6.6
(1)
t
8
BHE, BLE, LOCK
Valid Delay
4
30
ns
6.5
C
L
e
75 pF
(4)
t
9
BHE, BLE, LOCK
Float Delay
4
32
ns
6.6
(1)
t
10a
M/IO, D/C
Valid Delay
6
28
ns
6.5
C
L
e
75 pF
(4)
t
10b
W/R, ADS
Valid Delay
6
26
ns
6.5
C
L
e
75 pF
(4)
t
11
W/R, M/IO, D/C,
ADS Float Delay
6
30
ns
6.6
(1)
t
12
D
15
–D
0
Write Data
Valid Delay
4
38
ns
6.5
C
L
e
120 pF
t
13
D
15
–D
0
Write Data
Float Delay
4
27
ns
6.6
(1)
64
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