參數(shù)資料
型號(hào): 28F800C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 16M X 8 FLASH 3V PROM
文件頁數(shù): 7/59頁
文件大?。?/td> 321K
代理商: 28F800C3
E
28F800C3, 28F160C3, 28F320C3
7
PRELIMINARY
48-Lead TSOP
12 mm x 20 mm
TOP VIEW
33
32
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
24
23
22
21
20
19
17
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
25
26
27
28
29
30
31
16
15
7
14
6
13
5
12
4
A
V
CCQ
GND
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
V
CC
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
0
11
3
10
2
9
1
8
0
A
A
A
A
A
A
A
A
NC
WE#
RP#
V
A
19
A
18
A
A
A
A
A
A
A
A
17
7
6
5
4
3
2
1
15
14
13
12
11
10
9
8
A
20
32M
16M
8M
0645_02
NOTE:
Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pins 9 and 15.
Figure 1. 48-Lead TSOP Package
A
13
A
14
A
15
A
16
V
CCQ
A
11
A
10
A
12
D
14
D
15
A
8
WE#
A
9
D
5
D
6
V
PP
RP#
D
11
D
12
WP#
A
18
A
20
D
2
D
3
A
19
A
17
A
6
D
8
D
9
A
7
A
5
A
3
CE#
D
0
A
4
A
2
A
1
A
0
GND
GND
D
7
D
13
D
4
V
CC
D
10
D
1
OE#
A
B
C
D
E
F
1
3
2
5
4
7
6
8
16M
32M
NOTES:
1.
Shaded connections indicate the upgrade address connections. Lower density devices will not have the upper address
solder balls. Routing is not recommended in this area. A
19
is the upgrade address for the 16-Mbit device. A
20
is the
upgrade address for the 32-Mbit device.
8-Mbit not available on
μ
BGA* CSP.
Figure 2. 48-Ball
μ
BGA* Chip Size Package (Top View, Ball Down)
2.
相關(guān)PDF資料
PDF描述
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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