參數(shù)資料
型號: 28F800C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述: 16M X 8 FLASH 3V PROM
文件頁數(shù): 30/59頁
文件大小: 321K
代理商: 28F800C3
28F800C3, 28F160C3, 28F320C3
E
30
PRELIMINARY
4.5
AC Characteristics
—Read Operations
(1, 4)
—Extended Temperature
Density
8/16 Mbit
8/16 Mbit
Product
–90
–110
V
CC
3.0 V–3.6 V
2.7 V–3.6 V
3.0 V–3.6 V
2.7 V–3.6 V
#
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
80
90
100
110
ns
R2
t
AVQV
Address to
Output Delay
80
90
100
110
ns
R3
t
ELQV
CE# to Output
Delay
2
80
90
100
110
ns
R4
t
GLQV
OE# to Output
Delay
2
30
30
30
30
ns
R5
t
PHQV
RP# to Output
Delay
150
150
150
150
ns
R6
t
ELQX
CE# to Output in
Low Z
3
0
0
0
0
ns
R7
t
GLQX
OE# to Output in
Low Z
3
0
0
0
0
ns
R8
t
EHQZ
CE# to Output in
High Z
3
20
20
20
20
ns
R9
t
GHQZ
OE# to Output in
High Z
3
20
20
20
20
ns
R10
t
OH
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
See Figure 8 AC Waveform: Read Operations
OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 6,
Input/Output Reference Waveform
for timing measurements and maximum allowable input slew rate.
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