參數(shù)資料
型號: 28F800C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
中文描述: 16M X 8 FLASH 3V PROM
文件頁數(shù): 34/59頁
文件大?。?/td> 321K
代理商: 28F800C3
28F800C3, 28F160C3, 28F320C3
E
34
PRELIMINARY
4.6
AC Characteristics
—Write Operations
(1, 5, 6)
—Extended Temperature,
cont.
Density
8/16 Mbit
32 Mbit
Product
–90
–110
–100
–110
3.0 V – 3.6 V
80
100
90
100
2.7 V – 3.6 V
90
110
100
110
#
Sym
t
WHWL
/
t
EHEL
t
VPWH
/
t
VPEH
Parameter
Note
Min
Min
Min
Min
Min
Min
Min
Min
Unit
W9
WE# (CE#) Pulse
Width High
4
30
30
30
30
30
30
30
30
ns
W10
V
Setup to WE#
(CE#) Going High
3
200
200
200
200
200
200
200
200
ns
W11
t
QVVL
V
Hold from
Valid SRD
3
0
0
0
0
0
0
0
0
ns
W12
t
BHWH
/
t
BHEH
WP# Setup to
WE# (CE#) Going
High
3
0
0
0
0
0
0
0
0
ns
W13
t
QVBL
WP#
Hold from
Valid SRD
3
0
0
0
0
0
0
0
0
ns
W14
t
WHGL
WE# high to OE#
going low
3
30
30
30
30
30
30
30
30
ns
NOTES:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as during write-only operations.
Refer to Table 5 for valid A
IN
or D
IN
.
Sampled, but not 100% tested.
Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, write pulse width high (t
) is defined
from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low (whichever goes low first). Hence,
t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
See Figure 6, Input/Output Reference Waveformfor timing measurements and maximum allowable input slew rate.
See Figure 8, AC Waveform: Program and Erase Operations.
5.
6.
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