參數(shù)資料
型號(hào): 28F800C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 16M X 8 FLASH 3V PROM
文件頁數(shù): 46/59頁
文件大?。?/td> 321K
代理商: 28F800C3
28F800C3, 28F160C3, 28F320C3
E
46
PRELIMINARY
Start
Write 60H
(Configuration Setup)
No
Comments
Data = 60H
Addr = X
Write 90H
(Read Configuration)
Read Block Lock Status
Locking
Change
Confirmed
Locking Change
Complete
Bus
Operation
Write
Command
Write
01H, D0H, or 2FH
Write
Data= 01H (Lock Block)
D0H (Unlock Block)
2FH (Lockdown Block)
Addr=Within block to lock
Config. Setup
Lock, Unlock,
or Lockdown
Data = 90H
Addr = X
Write
(Optional)
Read
Configuration
Block Lock Status Data
Addr = Second addr of block
Read
(Optional)
Block Lock
Status
Confirm Locking Change on
DQ
, DQ
. (See Block Locking
State Table for valid
combinations.)
Standby
(Optional)
O
Write FFh
(Read Array)
Figure 15. Locking Operations Flowchart
相關(guān)PDF資料
PDF描述
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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