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參數(shù)資料
| 型號(hào)： | 28F320W30 |
| 廠商： | Intel Corp. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無(wú)線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁(yè)數(shù)： | 78/82頁(yè) |
| 文件大?。?/td> | 749K |
| 代理商： | 28F320W30 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
72
Preliminary
C.6
Intel-Specific Extended Query Table
Table C8. Primary Vendor-Specific Extended Query
(1)
Length
P = 39h
(P+0)h
3
(P+1)h
(P+2)h
(P+3)h
1
(P+4)h
1
(P+5)h
4
(P+6)h
(P+7)h
(P+8)h
Description
Hex
Code Value
--50
--52
--49
--31
--33
--E6
--03
--00
--00
bit 0 = 0
bit 1 = 1
bit 2 = 1
bit 3 = 0
bit 4 = 0
bit 5 = 1
bit 6 = 1
bit 7 = 1
bit 8 = 1
bit 9 = 1
42:
--01
(Optional flash features and commands)
Primary extended query table
Unique ASCII string
“
PRI
“
Add.
39:
3A:
3B:
3C:
3D:
3E:
3F:
40:
41:
"P"
"R"
"I"
"1"
"3"
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 10
–
31 are reserved; undefined bits are
“
0.
”
If bit 31 is
“
1
”
then another 31 bit field of Optional features follows at
the end of the bit
–
30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant individual block locking supported
bit 6 Protection bits supported
bit 7 Pagemode read supported
bit 8 Synchronous read supported
bit 9 Simultaneous operations supported
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1
–
7 reserved; undefined bits are
“
0
”
bit 0 Program supported after erase suspend
Block status register mask
bits 2
–
15 are Reserved; undefined bits are
“
0
”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
V
CC
logic supply highest performance program/erase voltage
bits 0
–
3 BCD value in 100 mV
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
(P+9)h
1
bit 0 = 1
43:
44:
bit 0 = 1
bit 1 = 1
45:
Yes
(P+A)h
(P+B)h
2
--03
--00
Yes
Yes
1.8V
(P+C)h
1
--18
(P+D)h
1
V
PP
optimum program/erase supply voltage
bits 0
–
3 BCD value in 100 mV
bits 4
–
7 HEX value in volts
46:
--C0
12.0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F6408W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F640W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F640P3 | Intel StrataFlash Embedded Memory |
| 28F320C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F400B3 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400B5 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F400B5WG8BET | 制造商: 功能描述: 制造商:Micron Technology Inc 功能描述: 制造商:undefined 功能描述: |
| 28F400BL-B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BL-T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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