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參數(shù)資料
| 型號： | 28F320W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 75/82頁 |
| 文件大小： | 749K |
| 代理商： | 28F320W30 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
69
C.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or
“
database.
”
The structure subsections and address locations are summarized
below.
Table C3. Query Structure
Offset
00000h
00001h
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2. BA = Block Address beginning location (i.e., 08000h is block 1
’
s beginning location when the block size is
32K-word).
3. Offset 15 defines
“
P
”
which points to the Primary Intel-specific Extended Query Table.
C.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully or whether
a given block is locked or can be accessed for flash program/erase operations.
Block Erase Status (BSR.1) allows system software to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to verify that the V
CC
supply was not
accidentally removed during an erase operation. Only issuing another operation to the block resets
this bit. The Block Status Register is accessed from word address 02h within each block.
Table C4. Block Status Register
Offset
(BA+2)h
(1)
NOTE:
BA = The beginning location of a Block Address (i.e., 008000h is block 1
’
s (64KB block) beginning
location in word mode).
Sub-Section Name
(1)
Manufacturer Code
Device Code
Block-specific information
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing & voltage information
Flash device layout
Vendor-defined additional information specific
to the Primary Vendor Algorithm
(2)
Block Status register
Reserved
CFI query identification string
System interface information
Device geometry definition
00004-Fh
00010h
0001Bh
00027h
P
(3)
Primary Intel-specific Extended Query Table
Length
1
Description
Add.
BA+2
BA+2 (bit 0): 0 or 1
Value
--00 or --01
Block Lock Status Register
BSR.0 Block lock status
0 = Unlocked
1 = Locked
BSR.1 Block lock-down status
0 = Not locked down
1 = Locked down
BSR 2
–
7: Reserved for future use
BA+2 (bit 1): 0 or 1
BA+2
(bit 2
–
7): 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F6408W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F640W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F640P3 | Intel StrataFlash Embedded Memory |
| 28F320C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F400B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400B5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F400B5WG8BET | 制造商: 功能描述: 制造商:Micron Technology Inc 功能描述: 制造商:undefined 功能描述: |
| 28F400BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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