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參數(shù)資料
| 型號： | 28F016XD |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器) |
| 中文描述： | 16兆位同步閃存（1,600位內(nèi)存接口閃速存儲器） |
| 文件頁數(shù)： | 9/54頁 |
| 文件大小： | 760K |
| 代理商： | 28F016XD |
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E
2.1 Lead Descriptions
28F016XD FLASH MEMORY
9
Symbol
Type
Name and Function
A
0
–A
9
INPUT
MULTIPLEXED ROW/COLUMN ADDRESSES:
Selects a word within
one of thirty-two 32-Kword blocks. Row (upper) addresses are latched on
the falling edge of RAS#, while column (lower) addresses are latched on
the falling edge of CAS#.
DATA BUS:
Inputs data and commands during CUI write cycles. Outputs
array, identifier or status data (DQ
0-7
) in the appropriate read mode.
Floated when the chip is de-selected or the outputs are disabled.
ROW ADDRESS STROBE:
Latches row address information on inputs
A
9-0
when RAS# transitions low. A subsequent CAS# low transition
initiates 28F016XD read or program operations.
COLUMN ADDRESS STROBE:
Latches column address information on
inputs A
9-0
when CAS# transitions low. When preceded by a RAS# low
transition, CAS# low initiates 28F016XD read or program operations,
along with OE# and WE#. Subsequent CAS# low transitions, with RAS#
held low, enable fast page mode reads/programs
RESET/POWER-DOWN:
RP# low places the device in a deep power-
down state. All circuits that consume static power, even those circuits
enabled in standby mode, are turned off. When returning from deep
power-down, a recovery time of 300 ns at 5.0V V
CC
is required to allow
these circuits to power-up.
When RP# goes low, the current WSM operation is terminated, and the
device is reset. All Status Registers return to ready (with all status flags
cleared).
Exit from deep power-down places the device in read array mode.
OUTPUT ENABLE:
Gates device data through the output buffers when
low in combination with RAS# and CAS# low. The outputs float to tri-state
off when OE# is high. OE# can be tied to GND if not controlled by the
system memory controller. RAS# and CAS# high override OE# low. WE#
low also overrides OE# low.
WRITE ENABLE:
Controls
access to the CUI, Data Register and Address
Register. WE# is active low and initiates programs in combination with
RAS# and CAS# low. WE# low overrides OE# low. RAS# and CAS# high
override WE# low.
READY/BUSY:
Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# floating
indicates that the WSM is ready for new operations, erase is suspended,
or the device is in deep power-down mode. This output is always active
(i.e., not floated to tri-state off when OE#, RAS# or CAS# are high).
WRITE PROTECT:
Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or erases. When WP# is high, all blocks can
be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
DQ
0
–DQ
15
INPUT/OUTPUT
RAS#
INPUT
CAS#
INPUT
RP#
INPUT
OE#
INPUT
WE#
INPUT
RY/BY#
OPEN DRAIN
OUTPUT
WP#
INPUT
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 28F020-150 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F020G12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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