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參數(shù)資料
| 型號： | 28F016SA |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲器) |
| 中文描述： | 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲器） |
| 文件頁數(shù)： | 6/55頁 |
| 文件大?。?/td> | 849K |
| 代理商： | 28F016SA |
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28F016SA
E
6
SEE NEW DESIGN RECOMMENDATIONS
when writing several bytes in a row to the array or
erasing several blocks at the same time. The
28F016SA can also perform program operations to
one block of memory while performing erase of
another block.
The 28F016SA provides user-selectable block
locking to protect code or data such as device
drivers, PCMCIA card information, ROM-executable
O/S or application code. Each block has an
associated nonvolatile lock-bit which determines the
lock status of the block. In addition, the 28F016SA
has a master Write Protect pin (WP#) which
prevents any modifications to memory blocks
whose lock-bits are set.
The 28F016SA contains three types of Status
Registers to accomplish various functions:
A Compatible Status Register (CSR) which is
100% compatible with the 28F008SA FlashFile
memory’s Status Register. This register, when
used alone, provides a straightforward upgrade
capability to the 28F016SA from a 28F008SA-
based design.
A Global Status Register (GSR) which informs
the system of Command Queue status, Page
Buffer status, and overall Write State Machine
(WSM) status.
32 Block Status Registers (BSRs) which provide
block-specific status information such as the
block lock-bit status.
The GSR and BSR memory maps for byte-wide and
word-wide modes are shown in Figures 5
and 6.
The 28F016SA incorporates an open drain RY/BY#
output pin. This feature allows the user to OR-tie
many RY/BY# pins together in a multiple memory
configuration such as a Resident Flash Array.
Other configurations of the RY/BY# pin are enabled
via special CUI commands and are described in
detail in the 16-Mbit Flash Product Family User’s
Manual.
The 28F016SA also incorporates a dual chip-enable
function with two input pins, CE
0
# and CE
1
#. These
pins have exactly the same functionality as the
regular chip-enable pin CE# on the 28F008SA. For
minimum chip designs, CE
1
# may be tied to ground
to use CE
0
# as the chip enable input. The
28F016SA uses the logical combination of these
two signals to enable or disable the entire chip. Both
CE
0
# and CE
1
# must be active low to enable the
device and, if either one becomes inactive, the chip
will be disabled. This feature, along with the open
drain RY/BY# pin, allows the system designer to
reduce the number of control pins used in a large
array of 16-Mbit devices.
The BYTE# pin allows either x8 or x16
read/programs to the 28F016SA. BYTE# at logic
low selects 8-bit mode with address A
0
selecting
between low byte and high byte. On the other hand,
BYTE# at logic high enables 16-bit operation with
address A
1
becoming the lowest order address and
address A
0
is not used (don’t care). A device block
diagram is shown in Figure 1.
The 28F016SA is specified for a maximum access
time of 70 ns (t
ACC
) at 5.0V operation (4.75V to
5.25V) over the commercial temperature range
(0
°
C to +70
°
C). A corresponding maximum access
time of 120 ns at 3.3V (3.0V to 3.6V and 0
°
C to
+70
°
C) is achieved for reduced power consumption
applications.
The 28F016SA incorporates an Automatic Power
Saving (APS) feature which substantially reduces
the active current when the device is in the static
mode of operation (addresses not switching).
In APS mode, the typical I
CC
current is 1 mA at 5.0V
(0.8 mA at 3.3V).
A deep power-down mode of operation is invoked
when the RP# (called PWD# on the 28F008SA) pin
transitions low. This mode brings the device power
consumption to less than 1.0 μA, typically, and
provides additional write protection by acting as a
device reset pin during power transitions. A reset
time is required from RP# switching high until
outputs are again valid. In the deep power-down
state, the WSM is reset (any current operation will
abort) and the CSR, GSR and BSR registers are
cleared.
A CMOS standby mode of operation is enabled
when either CE
0
# or CE
1
# transitions high and RP#
stays high with all input control pins at CMOS
levels. In this mode, the device typically draws an
I
CC
standby current of 50 μA.
2.0
DEVICE PINOUT
The 28F016SA 56-lead TSOP Type I pinout
configuration is shown in
Figure
2. The 56-lead
SSOP pinout configuration is shown in Figure 3.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SA/DD28F032SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION |
| 28F016SA-070 | 制造商:undefined 功能描述: |
| 28F016SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
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