參數(shù)資料
型號： 28F016SA
廠商： Intel Corp.
英文描述： 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲器)
中文描述： 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲器）
文件頁數(shù)： 44/55頁
文件大小： 849K
代理商： 28F016SA
28F016SA
E
44
SEE NEW DESIGN RECOMMENDATIONS
5.9
AC Characteristics for CE#
–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE
(1)
(Continued)
V
CC
= 5.0 to 10%, 5.0V ± 5%, T
A
= 0
°
C to +70
°
C, –40
°
C to +85
°
C
Temp
Commercial
Commercial
Comm/Ext
Versions
V
CC
± 5%
28F016SA-070
Unit
V
CC
± 10%
28F016SA-080
28F016SA-100
Sym
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
t
RHPL
RP# Hold from
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
3
0
0
0
ns
t
PHEL
RP# High
Recovery to
CE# Going Low
1
1
1
μs
t
EHGL
Write Recovery
before Read
60
65
80
μs
t
QVVL
V
PP
Hold from
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
0
0
0
μs
t
EHQV1
Duration of
Word/Byte
Program
Operation
4,5
4.5
6
Note
7
4.5
6
Note
7
4.5
6
Note
7
μs
t
EHQV2
Duration of
Block Erase
Operation
4
0.3
10
0.3
10
0.3
10
sec
NOTES:
CE# is defined as the latter of CE
0
# or CE
1
# going low or the first of CE
0
# or CE
1
# going high.
1.
Read timings during data program and block erase are the same as for normal read.
2.
Refer to command definition tables for valid address and data values.
3.
Sampled, but not 100% tested.
4.
Data program/block erase durations are measured to valid Status Register data.
5.
Word/byte program operations are typically performed with 1 programming pulse.
6.
Address and data are latched on the rising edge of CE# for all command write operations.
7.
This information will be available in a technical paper. Pl
ease call Intel’s Application Hotline or your local Intel sales office
for more information.
相關(guān)PDF資料
PDF描述
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SA/DD28F032SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION
28F016SA-070 制造商:undefined 功能描述:
28F016SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*