參數(shù)資料
型號: 28F016SA
廠商: Intel Corp.
英文描述: 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
中文描述: 16兆位(1兆位× 16,2兆位× 8)FlashFile內(nèi)存(16米位(1米位× 16,2米位× 8)FlashFile存儲(chǔ)器)
文件頁數(shù): 38/55頁
文件大?。?/td> 849K
代理商: 28F016SA
28F016SA
E
38
SEE NEW DESIGN RECOMMENDATIONS
5.8
AC Characteristics for WE#
–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE
(1)
V
CC
= 3.3V ± 10%, T
A
= 0
°
C to +70
°
C, –40
°
C to +85
°
C
Temp
Commercial
Comm/Extended
Sym
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Units
t
AVAV
Write Cycle Time
120
150
ns
t
VPWH
V
PP
Setup to WE# Going High
3
100
100
ns
t
PHEL
RP# Setup to CE# Going Low
480
480
ns
t
ELWL
CE# Setup to WE# Going Low
10
10
ns
t
AVWH
Address Setup to WE# Going
High
2,6
75
75
ns
t
DVWH
Data Setup to WE# Going
High
2,6
75
75
ns
t
WLWH
WE# Pulse Width
75
75
ns
t
WHDX
Data Hold from WE# High
2
10
10
ns
t
WHAX
Address Hold from WE# High
2
10
10
ns
t
WHEH
CE# Hold from WE# High
10
10
ns
t
WHWL
WE# Pulse Width High
45
75
ns
t
GHWL
Read Recovery before Write
0
0
ns
t
WHRL
WE# High to RY/BY# Going
Low
100
100
ns
t
RHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
3
0
0
ns
t
PHWL
RP# High Recovery to WE#
Going Low
1
1
μs
t
WHGL
Write Recovery before Read
95
120
ns
t
QVVL
V
PP
Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
0
μs
t
WHQV1
Duration of Word/Byte
Program Operation
4,5
5
9
Note
7
5
9
Note
7
μs
t
WHQV2
Duration of Block Erase
Operation
4
0.3
10
0.3
10
sec
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