- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F016SA (Intel Corp.) 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F016SA |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器) |
| 中文描述： | 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲(chǔ)器） |
| 文件頁數(shù)： | 31/55頁 |
| 文件大?。?/td> | 849K |
| 代理商： | 28F016SA |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當(dāng)前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
E
5.5
(Continued)
V
CC
= 5.0V ± 10%, 5.0V ± 5%,T
A
= 0
°
C to +70
°
C, -40
°
C to +85
°
C
3/5# Pin Set Low for 5V Operations
28F016SA
31
SEE NEW DESIGN RECOMMENDATIONS
DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE
Temp
Comm/Extended
Sym
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
I
PPW
V
PP
Program Current for
Word or Byte
V
PP
Block Erase
Current
V
PP
Erase Suspend
Current
Input Low Voltage
1
7
12
mA
V
PP
= V
PPH
Program in Progress
V
PP
= V
PPH
Block Erase in Progress
V
PP
= V
PPH
Block Erase Suspended
I
PPE
1
5
10
mA
I
PPES
1
65
200
μA
V
IL
V
IH
–0.5
0.8
V
Input High Voltage
2.0
V
CC
+0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
CC
= V
CC
Min
I
OH
= –100 μA
V
OH1
Output High Voltage
0.85
V
CC
V
CC
–0.4
0.0
V
V
OH2
V
V
PPL
V
PP
during Normal
Operations
V
PP
during Program/
Erase Operations
V
CC
Program/Erase
Lock Voltage
3
6.5
V
V
PPH
11.4
12.0
12.6
V
V
LKO
2.0
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, V
PP
= 12.0V, T = 25
°
C. These currents are
valid for all product versions (package and speeds).
I
CCES
is specified with the device deselected. If the device is read while in erase
suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
Block erases, word/byte programs and lock block operations are inhibited when V
PP
= V
PPL
and not guaranteed in the
range between V
PPH
and V
PPL
.
Automatic Power Saving (APS) reduces I
CCR
to less than 2 mA in static operation.
CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
Standby current levels are not reached when putting the chip in standby mode immediately after reading the page buffer.
Default the device into read array or read Status Register mode before entering standby to ensure standby current levels.
2.
3.
4.
5.
6.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F016XD | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器) |
| 28F016XS | 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器) |
| 28F020 | 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲(chǔ)器) |
| 28F128J3A | 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器) |
| 28F320J3A | 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SA/DD28F032SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION |
| 28F016SA-070 | 制造商:undefined 功能描述: |
| 28F016SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。