參數(shù)資料
型號： 28F016SA
廠商： Intel Corp.
英文描述： 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲器)
中文描述： 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲器）
文件頁數(shù)： 49/55頁
文件大?。?/td> 849K
代理商： 28F016SA
E
5.11
28F016SA
49
SEE NEW DESIGN RECOMMENDATIONS
Erase and Word/Byte Write Performance, Cycling Performance and
Suspend Latency
(3)
V
CC
= 3.3V ±
10%
, V
PP
= 12.0V ± 0.6V, T
A
= 0
°
C to +70
°
C
Sym
Parameter
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,4
3.26
Note 6
μs
Page Buffer Word Write Time
2,4
6.53
Note 6
μs
t
WHRH
1
Word/Byte Program Time
2
9
Note 6
μs
t
WHRH
2
Block Program Time
2
0.6
2.1
sec
Byte Prog. Mode
t
WHRH
3
Block Program Time
2
0.3
1.0
sec
Word Prog. Mode
Block Erase Time
2
0.8
10
sec
Full Chip Erase Time
2
25.6
sec
Erase Suspend Latency Time
to Read
7.0
μs
Auto Erase Suspend Latency
Time to Write
10.0
μs
Erase Cycles
5
100,000 1,000,000
Cycles
V
CC
= 5.0V ± 10%, V
PP
= 12.0V ± 0.6V, T
A
= 0
°
C to +70
°
C
Sym
Parameter
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,4
2.76
Note 6
μs
Page Buffer Word Write Time
2,4
5.51
Note 6
μs
t
WHRH
1
Word/Byte Program Time
2
6
Note 6
μs
t
WHRH
2
Block Program Time
2
0.4
2.1
sec
Byte Prog. Mode
t
WHRH
3
Block Program Time
2
0.2
1.0
sec
Word Prog. Mode
Block Erase Time
2
0.6
10
sec
Full Chip Erase Time
2
19.2
sec
Erase Suspend Latency Time
to Read
5.0
μs
Auto Erase Suspend Latency
Time to Write
8.0
μs
Erase Cycles
5
100,000 1,000,000
Cycles
NOTES:
1.
2.
3.
4.
5.
6.
+25
°
C, V
CC
= 3.3V or 5.0V nominal, V
PP
= 12.0V nominal, 10K cycles.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
This assumes using the full Page Buffer to data program to the flash memory (256 bytes or 128 words).
Typical 1,000,000 cycle performance assumes the application uses block retirement techniques.
This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel Sales office
for more information.
相關(guān)PDF資料
PDF描述
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SA/DD28F032SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFORMATION
28F016SA-070 制造商:undefined 功能描述:
28F016SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
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