參數(shù)資料
型號(hào): ZL30410
廠商: Zarlink Semiconductor Inc.
英文描述: CONN HDR INVERSE 30POS 5ROW VERT
中文描述: 多業(yè)務(wù)線卡鎖相環(huán)
文件頁(yè)數(shù): 22/38頁(yè)
文件大?。?/td> 400K
代理商: ZL30410
ZL30410
Data Sheet
22
Zarlink Semiconductor Inc.
5.0 Characteristics
5.1 AC and DC Electrical Characteristics
* Voltages are with respect to ground (GND) unless otherwise stated
* Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.
* Voltages are with respect to ground (GND) unless otherwise stated
DC Electrical Characteristics*
* Voltages are with respect to ground (GND) unless otherwise stated
Note 1:
VOS is defined as (V
+ V
) / 2
Note 2:
Rise and fall times are measured at 20% and 80% levels.
Absolute Maximum Ratings*
Parameter
Symbol
Min
Max
Units
1
Supply voltage
V
DDR
V
PIN
I
PIN
T
ST
P
PD
V
ESD
-0.3
7.0
V
2
Voltage on any pin
-0.3
VDD+0.3
V
3
Current on any pin
30
mA
4
Storage temperature
-55
125
°
C
5
Package power dissipation (80 pin LQFP)
1000
mW
6
ESD rating
1500
V
Recommended Operating Conditions
*
Characteristics
Symbol
Min
Typ
Max
Units
1
Supply voltage
V
DD
T
A
3.0
3.3
3.6
V
2
Operating temperature
-40
25
+85
°
C
Characteristics
Symbol
Min
Max
Units
Notes
1
Supply current with C20i = 20MHz
I
DD
I
DDS
V
CIH
V
CIL
I
IL
V
OH
V
OL
V
OD
dV
OD
155
mA
Outputs unloaded
2
Supply current with C20i = 0V
3.5
mA
Outputs unloaded
3
CMOS high-level input voltage
0.7V
DD
V
4
CMOS low-level input voltage
0.3V
DD
15
V
5
Input leakage current
μ
A
V
I
=V
DD
or GND
I
OH
=10mA
I
OL
=10mA
Z
T
=100
Z
T
=100
6
High-level output voltage
2.4
V
7
Low-level output voltage
0.4
V
8
LVDS: Differential output voltage
250
450
mV
9
LVDS: Change in VOD between
complementary output states
50
mV
10
LVDS: Offset voltage
V
OS
dV
OS
1.125
1.375
V
Note 1
11
LVDS: Change in VOS between
complementary output states
50
mV
12
LVDS: Output short circuit current
I
OS
T
RF
24
mA
Pin short to GND
13
LVDS: Output rise and fall times
260
900
ps
Note 2
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