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參數(shù)資料
| 型號(hào)： | W989D6CBGX7E |
| 廠(chǎng)商： | WINBOND ELECTRONICS CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54 |
| 文件頁(yè)數(shù)： | 8/67頁(yè) |
| 文件大?。?/td> | 1469K |
| 代理商： | W989D6CBGX7E |
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W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 16 -
Revision A01-004
Current State
CS
RAS
CAS
WE
Address
Command
Action
Notes
Read with
auto
precharge
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Write with
auto
precharge
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Precharging
H
X
DSL
Nop
→ Idle after tRP
L
H
X
NOP
Nop
→ Idle after tRP
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Nop
→ Idle after tRP
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Row
activating
H
X
DSL
Nop
→ Row active after tRCD
L
H
X
NOP
Nop
→ Row active after tRCD
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W989D6CBGX7G | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:512Mb Mobile LPSDR |
| W989D6KBGX7E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 54VFBGA |
| W98AD2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98AD2KBJX6I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98M9640 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
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