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參數(shù)資料
| 型號： | W989D6CBGX7E |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54 |
| 文件頁數(shù)： | 10/67頁 |
| 文件大小： | 1469K |
| 代理商： | W989D6CBGX7E |
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W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 18 -
Revision A01-004
7.1.3 Function Truth Table for CKE
Current State
CKE
CS
RAS
CAS
WE
Address
Action
Notes
n-1
n
Self refresh
H
X
N/A
L
H
X
Exit Self Refresh → Idle after tRFC
L
H
L
H
X
Exit Self Refresh → Idle after tRFC
L
H
L
H
L
X
ILLEGAL
L
H
L
X
ILLEGAL
L
X
Maintain Self Refresh
Power-Down
H
X
N/A
L
H
X
Exit Power Down → Idle after 1 clock cycle
L
H
X
L
X
Maintain Power-Down
Deep Power-Down
H
X
N/A
L
H
X
Exit Deep Power-
Down → Exit Sequence
L
X
Maintain Deep Power-Down
All banks idle
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power-down
2
H
L
H
X
Enter Power-Down
2
H
L
H
L
X
Enter Deep Power-Down
3
H
L
H
X
Self Refresh
1
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
L
X
Power-Down
2
Row Active
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power down
2
H
L
H
X
Enter Power down
2
H
L
H
X
ILLEGAL
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
L
X
Power-
Down → Row Active or Maintain PD
Any
state
other
than
listed above
H
X
Refer to Function Truth Table
Note:
1. Self refresh can enter only from the all banks idle state.
2. Power-down can enter only from the all banks idle or row active state.
3. Deep power-down can enter only from the all banks idle state.
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W989D6CBGX7G | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPSDR |
| W989D6KBGX7E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 54VFBGA |
| W98AD2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98AD2KBJX6I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98M9640 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
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