參數(shù)資料
型號: W981204AH-8H
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數(shù): 38/42頁
文件大?。?/td> 1082K
代理商: W981204AH-8H
W981204AH
8M x 4 Banks x 4 bits SDRAM
Revision 1.0
Publication Release Date: June, 2000
- 5 -
ABSOLUTE MAXIMUM RATINGS
SYMBOL
ITEM
RATING
UNIT
NOTES
VIN,VOUT
Input, Output Voltage
-0.3~VCC+0.3
V
1
VCC,VCCQ
Power Supply Voltage
-0.3~4.6
V
1
TOPR
Operating Temperature
0~70
°
C
1
TSTG
Storage Temperature
-55~150
°
C
1
TSOLDER
Soldering Temperature(10s)
260
°
C
1
PD
Power Dissipation
1
W
1
IOUT
Short Circuit Output Current
50
mA
1
RECOMMENDED DC OPERATING CONDITIONS ( Ta = 0 to 70°C )
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
NOTES
VCC
Power Supply Voltage
3.0
3.3
3.6
V
2
VCCQ
Power Supply Voltage (for I/O Buffer)
3.0
3.3
3.6
V
2
VIH
Input High Voltage
2.0
-
VCC+0.3
V
2
VIL
Input Low Voltage
-0.3
-
0.8
V
2
Note: VIH(max) = VCC/VCCQ+1.2V for pulse width < 5ns
VIL(min) = VSS/VSSQ-1.2V for pulse width < 5ns
CAPACITANCE (VCC=3.3V, f = 1MHz, Ta=25°C)
SYMBOL
PARAMETER
MIN
MAX
UNIT
CIN
Input Capacitance (A0 to A11, BS0 ,BS1, CS, RAS, CAS, WE, DQM, CKE)
-
3.8
pf
CCLK
Input Capacitance (CLK)
-
3.5
pf
CIO
Input/Output capacitance
-
6.5
pf
Note: These parameters are periodically sampled and not 100% tested.
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