- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄203637 > W9412G2IB-4 (WINBOND ELECTRONICS CORP) 4M X 32 DDR DRAM, 0.6 ns, PBGA144 PDF資料下載
參數(shù)資料
| 型號(hào)： | W9412G2IB-4 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 4M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件頁數(shù)： | 7/50頁 |
| 文件大?。?/td> | 826K |
| 代理商： | W9412G2IB-4 |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
W9412G2IB
Publication Release Date: Aug. 30, 2010
- 15 -
Revision A06
resulting in lower power dissipation (except CKE buffer). Refer to the diagrams for Refresh
operation.
7.8 Power Down Mode
Two types of Power Down Mode can be performed on the device: Active Power Down Mode and
Precharge Power Down Mode.
When the device enters the Power Down Mode, all input/output buffers are disabled resulting in
low power dissipation (except CKE buffer).
Power Down Mode enter asserting CKE “l(fā)ow” while the device is not running a burst cycle. Taking
CKE “high” can exit this mode. When CKE goes high, a No operation command must be input at
next CLK rising edge. Refer to the diagrams for Power Down Mode.
7.9 Input Clock Frequency Change during Precharge Power Down Mode
DDR SDRAM input clock frequency can be changed under following condition:
DDR SDRAM must be in precharged power down mode with CKE at logic LOW level. After a
minimum of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency
between minimum and maximum operating frequency specified for the particular speed grade.
During an input clock frequency change, CKE must be held LOW. Once the input clock frequency
is changed, a stable clock must be provided to DRAM before precharge power down mode may be
exited. The DLL must be RESET via EMRS after precharge power down exit. An additional MRS
command may need to be issued to appropriately set CL etc. After the DLL relock time, the DRAM
is ready to operate with new clock frequency.
7.10 Mode Register Operation
The mode register is programmed by the Mode Register Set command (MRS/EMRS) when all
banks are in the idle state. The data to be set in the Mode Register is transferred using the A0 to
A11 and BA0, BA1 address inputs.
The Mode Register designates the operation mode for the read or write cycle. The register is
divided into five filed: (1) Burst Length field to set the length of burst data (2) Addressing Mode
selected bit to designate the column access sequence in a Burst cycle (3) CAS Latency field to set
the assess time in clock cycle (4) DLL reset field to reset the DLL (5) Regular/Extended Mode
Register filed to select a type of MRS (Regular/Extended MRS). EMRS cycle can be implemented
the extended function (DLL enable/Disable mode).
The initial value of the Mode Register (including EMRS) after power up is undefined; therefore the
Mode Register Set command must be issued before power operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W9425G6JB-5 | DDR DRAM, PBGA60 |
| W9425G8DH-6 | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
| W946432AD-6 | 2M X 32 DDR DRAM, 0.1 ns, PQFP100 |
| W947D6HBHX6E | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| W9602BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9412G2IB-5 | 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1 |
| W9412G6CH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9412G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。