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參數(shù)資料
| 型號(hào)： | W9412G2IB-4 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 4M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件頁(yè)數(shù)： | 15/50頁(yè) |
| 文件大?。?/td> | 826K |
| 代理商： | W9412G2IB-4 |
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W9412G2IB
Publication Release Date: Aug. 30, 2010
- 22 -
Revision A06
8.4 Function Truth Table, continued
CURRENT
STATE
CS RAS CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP->Row active after tWR
L
H
X
NOP
NOP->Row active after tWR
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP->Enter precharge after
tWR
L
H
X
NOP
NOP->Enter precharge after
tWR
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
with Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP->Idle after tRC
L
H
X
NOP
NOP->Idle after tRC
L
H
L
X
BST
ILLEGAL
L
H
L
H
X
READ/WRIT
ILLEGAL
L
H
X
ACT/PRE/PREA
ILLEGAL
Refreshing
L
X
AREF/SELF/MRS/EMRS
ILLEGAL
H
X
DSL
NOP->Row after tMRD
L
H
X
NOP
NOP->Row after tMRD
L
H
L
X
BST
ILLEGAL
L
H
L
X
READ/WRIT
ILLEGAL
Mode
Register
Accessing
L
X
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
ILLEGAL
Notes
:
1. All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2. Illegal if any bank is not idle.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. Illegal if tRCD is not satisfied.
5. Illegal if tRAS is not satisfied.
6. Must satisfy burst interrupt condition.
7. Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8. Must mask preceding data which don’t satisfy tWR
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9412G2IB-5 | 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1 |
| W9412G6CH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9412G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
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