參數(shù)資料
型號(hào)： W9412G2IB-4
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 4M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝： 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144
文件頁(yè)數(shù)： 4/50頁(yè)
文件大小： 826K
代理商： W9412G2IB-4
W9412G2IB
Publication Release Date: Aug. 30, 2010
- 12 -
Revision A06
1) READA
≥ tRAS (min) – (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2) tRCD(min)
≤ READA < tRAS(min) – (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
7.2.8
Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “L”, BA1 = “L”, A0 to A11 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
7.2.9
Extended Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “H”, BA1 = “L”, A0 to A11 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). Currently the only available mode in EMRS is DLL
enable/disable, decoded by A0. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
7.2.10 No-Operation Command
( RAS = “H”, CAS = “H”, WE = “H”)
The No-Operation command simply performs no operation (same command as Device Deselect).
7.2.11
Burst Read Stop Command
( RAS = “H”, CAS = “H”, WE = “L”)
The Burst stop command is used to stop the burst operation. This command is only valid during a
Burst Read operation.
7.2.12 Device Deselect Command
( CS = “H”)
The Device Deselect command disables the command decoder so that the RAS , CAS ,
WE
and Address inputs are ignored. This command is similar to the No-Operation command.
7.2.13
Auto Refresh Command
( RAS = “L”, CAS = “L”, WE = “H”, CKE = “H”, BA0, BA1, A0 to A11 = Don’t Care)
AUTO REFRESH is used during normal operation of the DDR SDRAM and is analogous to CAS–
BEFORE–RAS (CBR) refresh in previous DRAM types. This command is non-persistent, so it
must be issued each time a refresh is required.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9412G2IB-5 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1
W9412G6CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM
W9412G6IH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM
W9412G6IH-5 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
W9412G6JH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM
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