參數(shù)資料
型號(hào): W78E354P
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): 微控制器/微處理器
英文描述: MONITOR MICROCONTROLLER
中文描述: 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC68
封裝: PLASTIC, LCC-68
文件頁(yè)數(shù): 34/45頁(yè)
文件大?。?/td> 430K
代理商: W78E354P
W78E354
- 34 -
C. ROM-MAP Bits
In order to increase the functionality of the 16K byte Flash ROM, the Flash ROM is divided into 4
blocks. If some blocks contain bad Flash cells but the other blocks are good, the 16KB Flash can be
treated as either 8KB or 4KB, and the W78E354 downgraded to either the W78E352 or the
W78E351.
Four ROM-MAP bits are used to indicate the availability of the 16K bytes of Flash ROM after testing.
MSB
LSB
B0
ROM-MAP
B3
B2
B1
16K bytes Flash ROM
Block 0, 4K bytes
Block 1, 4K bytes
Block 2, 4K bytes
Block 3, 4K bytes
Set B0 = 1 if block 0 is available.
Set B1 = 1 if block 1 is available.
Set B2 = 1 if block 2 is available.
Set B3 = 1 if block 3 is available.
Note: Only one/two/four of the four bits can be set to indicate whether 4K/8K/16K are usable.
FLASH/TEST MODE
A. Flash Modes
1. Read
This mode is supported for customer code verification. The data will be invalid if the Lock bit is set
low.
2. Output Disable
When the
OE
is set high, no data outputs appear on D7..D0.
3. Standby
This condition disables the DC path from the Flash cell to reduce power consumption.
4. Program
This mode is used to program the Flash cell and option bits. It is the only way to change data from "1"
to "0".
5. Program Verify
All the programming data must be checked after program or mass program operations. This operation
should be performed after each byte is programmed to ensure a substantial program margin.
6. Erase
An erase operation is the only way to change data from "0" to "1".
7. Erase Verify
After an erase operation, all of the bytes in the chip must be verified to check whether they have been
successfully erased to 1 or not. The erase verify operation automatically ensures a substantial erase
margin. This operation will be implemented after the erase operation if V
PP
= V
EP
(14.5V),
CE
is high
and
OE
is low.
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