參數(shù)資料
型號: W3H32M72E-400SB2M
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 32M X 72 DDR DRAM, 0.6 ns, PBGA208
封裝: 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁數(shù): 15/25頁
文件大?。?/td> 1062K
代理商: W3H32M72E-400SB2M
W3H32M72E-XSB2X
November 2010 2010 Microsemi Corporation. All rights reserved.
22
Microsemi Corporation (602) 437-1520 www.whiteedc.com
Rev. 3
www.microsemi.com
Microsemi Corporation reserves the right to change products or specications without notice.
AC TIMING PARAMETERS
(continued)
-55°C ≤ TA ≤ +125°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Parameter
Symbol
667Mbs CL5
533Mbs CL4
400Mbs CL3
Unit
Min
Max
Min
Max
Min
Max
ODT
ODT tum-on delay
tAOND
222222
tCK
ODT turn-on
tAON
tAC(MIN)
tAC(MAX) +
1000
tAC(MIN)
tAC(MAX) +
1000
tAC(MIN)
tAC(MAX) +
1000
ps
ODT turn-off delay
tAOFD
2.5
tCK
ODT tum-off
tAOF
tAC(MIN)
tAC(MAX) +
600
tAC(MIN)
tAC(MAX) +
600
tAC(MIN)
tAC(MAX) +
600
ps
ODT tum-on (power-down mode)
tAONPD
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
ps
ODT turn-off (power-down mode)
tAOFPD
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) +
1000
ps
ODT to power-down entry latency
tANPD
333
tCK
ODT power-down exit latency
tAXPD
888
tCK
Power-Down
Exit active power-down to READ command, MR[bit12=0]
tXARD
222
tCK
Exit active power-down to READ command, MR[bit12=1]
tXARDS
7-AL
6-AL
tCK
Exit precharge power-down to any non-READ command
tXP
222
tCK
CKE minimum high/low time
tCKE
333
tCK
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