- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140360 > W3H32M72E-400SB2M (MICROSEMI CORP-PMG MICROELECTRONICS) 32M X 72 DDR DRAM, 0.6 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H32M72E-400SB2M |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| 封裝： | 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 11/25頁 |
| 文件大?。?/td> | 1062K |
| 代理商： | W3H32M72E-400SB2M |
W3H32M72E-XSB2X
November 2010 2010 Microsemi Corporation. All rights reserved.
19
Microsemi Corporation (602) 437-1520 www.whiteedc.com
Rev. 3
www.microsemi.com
Microsemi Corporation reserves the right to change products or specications without notice.
DDR2 ICC SPECIFICATIONS AND CONDITIONS
VCC = 1.8V ±0.1V; -55°C ≤ TA ≤ 125°C
Symbol
Proposed Conditions
667 CL5
533 CL4
400 CL3
Units
ICC0
Operating one bank active-precharge current;
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
600
550
mA
ICC1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD
= tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDAD6W
750
675
650
mA
ICC2P
Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data
bus inputs are FLOATING
35
mA
ICC2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
STABLE; Data bus inputs are FLOATING
275
225
200
mA
ICC2N
Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
300
250
225
mA
ICC3P
Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
200
175
150
mA
Slow PDN Exit MRS(12) = 1
60
mA
ICC3N
Active standby current;
All banks open; tCK = tCK(ICC), tRAS = tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
350
300
250
mA
ICC4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS =
tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
1,250
1,025
800
mA
ICC4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS
= tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data pattern is same as IDAD6W
1,175
975
775
mA
ICC5
Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
1,100
1,050
1,000
mA
ICC6
Self refresh current;
CK and CK# at 0V; CKE 0.2V; Other control and address bus
inputs
are FLOATING; Data bus inputs are FLOATING
Normal
35
mA
ICC7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK =
tCK(ICC), tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R;
Refer to the following page for detailed timing conditions
1,700
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3HG2128M64EEU805XD4IMG | 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 |
| W7MG21M32SVT70BNC | 2M X 32 FLASH 3.3V PROM MODULE, 70 ns, SMA80 |
| W7NCF02GH30CS2AG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH30CS5DG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH30CS8DG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H32M72E-400SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H32M72E-400SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M72E-400SBM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk |
| W3H32M72E-533ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M72E-533ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。